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DC Field | Value | Language |
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dc.citation.endPage | 1128 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1120 | - |
dc.citation.title | ADVANCED FUNCTIONAL MATERIALS | - |
dc.citation.volume | 23 | - |
dc.contributor.author | Choi, Yeon Sik | - |
dc.contributor.author | Sung, Jinwoo | - |
dc.contributor.author | Kang, Seok Ju | - |
dc.contributor.author | Cho, Sung Hwan | - |
dc.contributor.author | Hwang, Ihn | - |
dc.contributor.author | Hwang, Sun Kak | - |
dc.contributor.author | Huh, June | - |
dc.contributor.author | Kim, Ho-Cheol | - |
dc.contributor.author | Bauer, Siegfried | - |
dc.contributor.author | Park, Cheolmin | - |
dc.date.accessioned | 2023-12-22T04:09:50Z | - |
dc.date.available | 2023-12-22T04:09:50Z | - |
dc.date.created | 2015-08-24 | - |
dc.date.issued | 2013-03 | - |
dc.description.abstract | Films made of 2D networks of single-walled carbon nanotubes (SWNTs) are one of the most promising active-channel materials for field-effect transistors (FETs) and have a variety of flexible electronic applications, ranging from biological and chemical sensors to high-speed switching devices. Challenges, however, still remain due to the current hysteresis of SWNT-containing FETs, which has hindered further development. A new and robust method to control the current hysteresis of a SWNT-network FET is presented, which involves the non-volatile polarization of a ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) gate insulator. A top-gate FET with a solution-processed SWNT-network exhibits significant suppression of the hysteresis when the gate-voltage sweep is greater than the coercive field of the ferroelectric polymer layer (approximate to 50 MV m1). These near-hysteresis-free characteristics are believed to be due to the characteristic hysteresis of the P(VDF-TrFE), resulting from its non-volatile polarization, which makes effective compensation for the current hysteresis of the SWNT-network FETs. The onset voltage for hysteresis-minimized operation is able to be tuned simply by controlling the thickness of the ferroelectric film, which opens the possibility of operating hysteresis-free devices with gate voltages down to a few volts | - |
dc.identifier.bibliographicCitation | ADVANCED FUNCTIONAL MATERIALS, v.23, no.9, pp.1120 - 1128 | - |
dc.identifier.doi | 10.1002/adfm.201201170 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.scopusid | 2-s2.0-84874697887 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/18438 | - |
dc.identifier.url | http://onlinelibrary.wiley.com/doi/10.1002/adfm.201201170/abstract | - |
dc.identifier.wosid | 000315693900005 | - |
dc.language | 영어 | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Control of Current Hysteresis of Networked Single-Walled Carbon Nanotube Transistors by a Ferroelectric Polymer Gate Insulator | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | networked single-walled carbon nanotubes | - |
dc.subject.keywordAuthor | field-effect transistors | - |
dc.subject.keywordAuthor | nanocomposites | - |
dc.subject.keywordAuthor | hysteresis | - |
dc.subject.keywordAuthor | ferroelectric polymer insulators | - |
dc.subject.keywordAuthor | poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.subject.keywordPlus | ELECTRONIC-PROPERTIES | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | TRANSPARENT | - |
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