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Reduced Stark shift in three-dimensionally confined GaN/AlGaN asymmetric multiquantum disks

Author(s)
Park, Young S.Chan, Christopher C. S.Reid, Benjamin P. L.Holmes, Mark J.Coles, David M.Alexander-Webber, Jack A.Nicholas, Robin J.Taylor, Robert A.Lee, Seung-WoongYang, WoochulIm, Hyunsik
Issued Date
2015-04
DOI
10.1364/OME.5.000849
URI
https://scholarworks.unist.ac.kr/handle/201301/17443
Fulltext
https://www.osapublishing.org/ome/abstract.cfm?uri=ome-5-4-849
Citation
OPTICAL MATERIALS EXPRESS, v.5, no.4, pp.849 - 857
Abstract
The optical transitions of the three-dimensionally confined GaN/AlGaN asymmetric multi quantum disks were characterized by micro photoluminescence and time-resolved photoluminescence. Several fine emission lines, originating from the wide and narrow quantum disks, were observed around 3.7 eV from a single nanocolumn dispersed on a patterned SiO2 substrate. The photoluminescence from the wide quantum disk shifts a little with increasing excitation power, while that from the narrow quantum disk does not shift. This effect can be explained by carrier tunneling for the 3-dimensionally confined quantum disks. Kelvin probe force microscopy results confirm that the GaN/AlGaN multiquantum disks are surrounded by a GaN shell, which has a higher potential than core GaN. (C) 2015 Optical Society of Americ
Publisher
OPTICAL SOC AMER
ISSN
2159-3930
Keyword
QUANTUM-WELL STRUCTURESMOLECULAR-BEAM EPITAXYLIGHT-EMITTING-DIODESGAN NANORODSSPECTROSCOPYDEPENDENCEDISCSGREENBLUE

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