고기능 EL 소자용 고분자/유기 재료의 합성 및 전기 광학적 특성; 1. 도포법에 의한 EL 소자의 특성

Abstract

Organic thin film electroluminescence devices were fabricated using by molecularly doped method with N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-bipheny1-4,4'-diamine(TPD) as a hole transport agent, tris(8-quinolinolato) aluminium(Ⅲ) (Alq3) as an omitting and electron transport agent, and poly(methyl methacrylate) (PMMA), polycarbonate (PC) and poly(viny1 carbazole) (PVK) as polymer matrices. The effect of polymer matrix and hole transport layer fabrication method of EL devices on the electroluminescence characteristics were examined. Spin coating and film casting method were compared for the formation of molecularly doped hole transport layer. The highest intensity and stability of EL device was obtained by film casting method using dichloroethane as a solvent at a polymer/TPD concentration of 0.005 wt% and film casting temperature of 30℃. The electroluminescence intensity increased in the order of PMMA3/Mg(PVK/TPD = 30/70).