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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 243 | - |
| dc.citation.number | 3 | - |
| dc.citation.startPage | 239 | - |
| dc.citation.title | SENSORS AND ACTUATORS A-PHYSICAL | - |
| dc.citation.volume | 57 | - |
| dc.contributor.author | Park, LS | - |
| dc.contributor.author | Hur, YJ | - |
| dc.contributor.author | Sohn, BK | - |
| dc.date.accessioned | 2023-12-22T12:38:23Z | - |
| dc.date.available | 2023-12-22T12:38:23Z | - |
| dc.date.created | 2015-09-18 | - |
| dc.date.issued | 1996-12 | - |
| dc.description.abstract | An EET-type K+ -sensitive sensor with a membrane composed of a hydrophobic inner layer and a hydrophilic outer layer has been fabricated by a photolithographic process. The base chip for the sensor is a pH-ISFET with a thin Si3N4 layer. Negative photoresist (OMR-83) is used as the inner layer and poly(vinyl pyrrolidinone-co-vinyl acetate) solution in tetrahydrofuran containing valinomycin and 2,6-bis-(p-azidobenzylidene) cyclohexanone photosensitizer is used as the outer sensing membrane material. The K-ISFET sensor with double-layered membrane shows a high sensitivity (56 mV/decade) toward K+ ion, rapid response (1-2s) and low interference (less than 3mV/decade) from the competing H+ ion | - |
| dc.identifier.bibliographicCitation | SENSORS AND ACTUATORS A-PHYSICAL, v.57, no.3, pp.239 - 243 | - |
| dc.identifier.doi | 10.1016/S0924-4247(97)80120-3 | - |
| dc.identifier.issn | 0924-4247 | - |
| dc.identifier.scopusid | 2-s2.0-0030350245 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/16991 | - |
| dc.identifier.url | http://www.sciencedirect.com/science/article/pii/S0924424797801203 | - |
| dc.identifier.wosid | A1996WX48300012 | - |
| dc.language | 영어 | - |
| dc.publisher | ELSEVIER SCIENCE SA | - |
| dc.title | Effect of membrane structure on the performance of field-effect transistor potassium-sensitive sensor | - |
| dc.type | Article | - |
| dc.description.journalRegisteredClass | scopus | - |
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