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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 3809 | - |
| dc.citation.number | 8 | - |
| dc.citation.startPage | 3804 | - |
| dc.citation.title | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | - |
| dc.citation.volume | 134 | - |
| dc.contributor.author | Kim, Sungwoo | - |
| dc.contributor.author | Kim, Taehoon | - |
| dc.contributor.author | Kang, Meejae | - |
| dc.contributor.author | Kwak, Seong Kwon | - |
| dc.contributor.author | Yoo, Tae Wook | - |
| dc.contributor.author | Park, Lee Soon | - |
| dc.contributor.author | Yang, Ilseung | - |
| dc.contributor.author | Hwang, Sunjin | - |
| dc.contributor.author | Lee, Jung Eun | - |
| dc.contributor.author | Kim, Seong Keun | - |
| dc.contributor.author | Kim, Sang-Wook | - |
| dc.date.accessioned | 2023-12-22T05:36:10Z | - |
| dc.date.available | 2023-12-22T05:36:10Z | - |
| dc.date.created | 2015-09-18 | - |
| dc.date.issued | 2012-02 | - |
| dc.description.abstract | Highly stable and luminescent InP/GaP/ZnS QDs with a maximum quantum yield of 85% were synthesized by in situ method. The GaP shell rendered passivation of the surface and removed the traps. TCSPC data showed an evidence for the GaP shell. InP/GaP/ZnS QDs show better stability than InP/ZnS. We studied the optical properties of white QD-LEDs corresponding to various QD concentrations. Among various concentrations, the white QD-LEDs with 0.5 mL of QDs exhibited a luminous efficiency of 54.71 lm/W, Ra of 80.56, and CCT of 7864 K | - |
| dc.identifier.bibliographicCitation | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.134, no.8, pp.3804 - 3809 | - |
| dc.identifier.doi | 10.1021/ja210211z | - |
| dc.identifier.issn | 0002-7863 | - |
| dc.identifier.scopusid | 2-s2.0-84863230312 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/16943 | - |
| dc.identifier.url | http://pubs.acs.org/doi/abs/10.1021/ja210211z | - |
| dc.identifier.wosid | 000301161600034 | - |
| dc.language | 영어 | - |
| dc.publisher | AMER CHEMICAL SOC | - |
| dc.title | Highly Luminescent InP/GaP/ZnS Nanocrystals and Their Application to White Light-Emitting Diodes | - |
| dc.type | Article | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | CDSE QUANTUM DOTS | - |
| dc.subject.keywordPlus | COLLOIDAL INP NANOCRYSTALS | - |
| dc.subject.keywordPlus | HIGH-QUALITY INP | - |
| dc.subject.keywordPlus | CATION-EXCHANGE | - |
| dc.subject.keywordPlus | SEMICONDUCTOR-NANOCRYSTALS | - |
| dc.subject.keywordPlus | INP/ZNS NANOCRYSTALS | - |
| dc.subject.keywordPlus | RAPID SYNTHESIS | - |
| dc.subject.keywordPlus | SOLAR-CELLS | - |
| dc.subject.keywordPlus | EMISSION | - |
| dc.subject.keywordPlus | BLUE | - |
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