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Park, Lee Soon
School of Materials Science and Engineering
Research Interests
  • Flexible OLED new materials, process and fabrication

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Highly Luminescent InP/GaP/ZnS Nanocrystals and Their Application to White Light-Emitting Diodes

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Title
Highly Luminescent InP/GaP/ZnS Nanocrystals and Their Application to White Light-Emitting Diodes
Author
Kim, SungwooKim, TaehoonKang, MeejaeKwak, Seong KwonYoo, Tae WookPark, Lee SoonYang, IlseungHwang, SunjinLee, Jung EunKim, Seong KeunKim, Sang-Wook
Keywords
In-situ methods; InP; Luminous efficiency; White light emitting diodes
Issue Date
201202
Publisher
AMER CHEMICAL SOC
Citation
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.134, no.8, pp.3804 - 3809
Abstract
Highly stable and luminescent InP/GaP/ZnS QDs with a maximum quantum yield of 85% were synthesized by in situ method. The GaP shell rendered passivation of the surface and removed the traps. TCSPC data showed an evidence for the GaP shell. InP/GaP/ZnS QDs show better stability than InP/ZnS. We studied the optical properties of white QD-LEDs corresponding to various QD concentrations. Among various concentrations, the white QD-LEDs with 0.5 mL of QDs exhibited a luminous efficiency of 54.71 lm/W, Ra of 80.56, and CCT of 7864 K
URI
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DOI
http://dx.doi.org/10.1021/ja210211z
ISSN
0002-7863
Appears in Collections:
MSE_Journal Papers

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