dc.citation.endPage |
7490 |
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dc.citation.number |
9 |
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dc.citation.startPage |
7479 |
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dc.citation.title |
OPTICS EXPRESS |
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dc.citation.volume |
17 |
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dc.contributor.author |
Jun, Young Chul |
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dc.contributor.author |
Briggs, Ryan M. |
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dc.contributor.author |
Atwater, Harry A. |
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dc.contributor.author |
Brongersma, Mark L. |
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dc.date.accessioned |
2023-12-22T08:07:27Z |
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dc.date.available |
2023-12-22T08:07:27Z |
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dc.date.created |
2015-09-07 |
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dc.date.issued |
2009-04 |
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dc.description.abstract |
We investigate the light emission properties of electrical dipole emitters inside 2-dimensional (2D) and 3-dimensional (3D) silicon slot waveguides and evaluate the spontaneous emission enhancement (F-p) and waveguide coupling ratio (beta). Under realistic conditions, we find that greater than 10-fold enhancement in Fp can be achieved, together with a beta as large as 0.95. In contrast to the case of high Q optical resonators, such performance enhancements are obtained over a broad wavelength region, which can cover the entire emission spectrum of popular optical dopants such as Er. The enhanced luminescence efficiency and the strong coupling into a limited set of well-defined waveguide modes enables a new class of power-efficient, CMOS-compatible, waveguide-based light sources. (c) 2009 Optical Society of Americ |
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dc.identifier.bibliographicCitation |
OPTICS EXPRESS, v.17, no.9, pp.7479 - 7490 |
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dc.identifier.doi |
10.1364/OE.17.007479 |
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dc.identifier.issn |
1094-4087 |
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dc.identifier.scopusid |
2-s2.0-66649121164 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/16686 |
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dc.identifier.url |
https://www.osapublishing.org/oe/abstract.cfm?uri=oe-17-9-7479 |
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dc.identifier.wosid |
000266381700063 |
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dc.language |
영어 |
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dc.publisher |
OPTICAL SOC AMER |
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dc.title |
Broadband enhancement of light emission in silicon slot waveguides |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scopus |
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