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- Shin, Tae Joo
- Synchrotron Radiation Research Lab.
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Residual stress behavior in methylsilsesquioxane-based dielectric thin films
- Author(s)
- Oh, W, Shin, Tae Joo, Ree, M, Jin, MY, Char, K
- Issued Date
- 2001-04
- Citation
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.371, pp.397 - 402
- Abstract
- Residual stress of methylsilsequioxane film, which was spin-coated on silicon substrate and followed by soft-baking, was measured in-situ during curing and subsequent cooling with varying processing conditions. The thickness and refractive index of the cured films were measured using ellipsometry. Their structure was also examined by Xray diffraction
- Publisher
- TAYLOR & FRANCIS LTD
- ISSN
- 1542-1406
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