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신형준

Shin, Hyung-Joon
Nanoscale Materials Science Lab.
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dc.citation.endPage 4775 -
dc.citation.number 7 -
dc.citation.startPage 4769 -
dc.citation.title NANO LETTERS -
dc.citation.volume 15 -
dc.contributor.author Kim, Gwangwoo -
dc.contributor.author Lim, Hyunseob -
dc.contributor.author Ma, Kyung Yeol -
dc.contributor.author Jang, A-Rang -
dc.contributor.author Ryu, Gyeong Hee -
dc.contributor.author Jung, Minbok -
dc.contributor.author Shin, Hyung-Joon -
dc.contributor.author Lee, Zonghoon -
dc.contributor.author Shin, Hyeon Suk -
dc.date.accessioned 2023-12-22T01:07:43Z -
dc.date.available 2023-12-22T01:07:43Z -
dc.date.created 2015-08-31 -
dc.date.issued 2015-07 -
dc.description.abstract Heterostructures of hexagonal boron nitride (h-BN) and graphene have attracted a great deal of attention for potential applications in 2D materials. Although several methods have been developed to produce this material through the partial substitution reaction of graphene, the reverse reaction has not been reported. Though the endothermic nature of this reaction might account for the difficulty and previous absence of such a process, we report herein a new chemical route in which the Pt substrate plays a catalytic role. We propose that this reaction proceeds through h-BN hydrogenation; subsequent graphene growth quickly replaces the initially etched region. Importantly, this conversion reaction enables the controlled formation of patterned in-plane graphene/h-BN heterostructures, without needing the commonly employed protecting mask, simply by using a patterned Pt substrate -
dc.identifier.bibliographicCitation NANO LETTERS, v.15, no.7, pp.4769 - 4775 -
dc.identifier.doi 10.1021/acs.nanolett.5b01704 -
dc.identifier.issn 1530-6984 -
dc.identifier.scopusid 2-s2.0-84936806387 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/16402 -
dc.identifier.url http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b01704 -
dc.identifier.wosid 000357964100078 -
dc.language 영어 -
dc.publisher AMER CHEMICAL SOC -
dc.title Catalytic Conversion of Hexagonal Boron Nitride to Graphene for In-Plane Heterostructures -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter -
dc.relation.journalResearchArea Chemistry; Science & Technology - Other Topics; Materials Science; Physics -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor in-plane heterostructure -
dc.subject.keywordAuthor graphene -
dc.subject.keywordAuthor hexagonal boron nitride -
dc.subject.keywordAuthor chemical vapor deposition -
dc.subject.keywordAuthor platinum -
dc.subject.keywordPlus CHEMICAL-VAPOR-DEPOSITION -
dc.subject.keywordPlus RAMAN-SPECTROSCOPY -
dc.subject.keywordPlus THERMAL-EXPANSION -
dc.subject.keywordPlus CARBON NANOTUBES -
dc.subject.keywordPlus SINGLE-CRYSTAL -
dc.subject.keywordPlus HIGH-QUALITY -
dc.subject.keywordPlus GROWTH -
dc.subject.keywordPlus PLATINUM -
dc.subject.keywordPlus LAYERS -
dc.subject.keywordPlus FILMS -

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