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Lee, Geunsik
Computational Research on Electronic Structure and Transport in Condensed Materials
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First-principles study of metal-graphene interfaces

Alternative Title
First-principles study of metal-graphene interfaces
Author(s)
Gong, ChengLee, GeunsikShan, BinVogel, Eric M.Wallace, Robert M.Cho, Kyeongjae
Issued Date
2010-12
DOI
10.1063/1.3524232
URI
https://scholarworks.unist.ac.kr/handle/201301/13273
Fulltext
http://scitation.aip.org/content/aip/journal/jap/108/12/10.1063/1.3524232
Citation
JOURNAL OF APPLIED PHYSICS, v.108, no.12, pp.123711
Abstract
Metal-graphene contact is a key interface in graphene-based device applications, and it is known that two types of interfaces are formed between metal and graphene. In this paper, we apply first-principles calculations to twelve metal-graphene interfaces and investigate the detailed interface atomic and electronic structures of physisorption and chemisorption interfaces. For physisorption interfaces (Ag, Al, Cu, Cd, Ir, Pt, and Au), Fermi level pinning and Pauli-exclusion-induced energy-level shifts are shown to be two primary factors determining graphene's doping types and densities. For chemisorption interfaces (Ni, Co, Ru, Pd, and Ti), the combination of Pauli-exclusion-induced energy-level shifts and hybridized states' repulsive interactions lead to a band gap opening with metallic gap states. For practical applications, we show that external electric field can be used to modulate graphene's energy-levels and the corresponding control of doping or energy range of hybridization. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524232
Publisher
AMER INST PHYSICS
ISSN
0021-8979

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