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Park, Kibog
Emergent Materials & Devices Lab
Research Interests
  • Semiconductor, metal oxide thin film, graphene, non-volatile memory, quantum transport

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Enhanced Crystallinity of Epitaxial Graphene Grown on Hexagonal SiC Surface with Molybdenum Plate Capping

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Title
Enhanced Crystallinity of Epitaxial Graphene Grown on Hexagonal SiC Surface with Molybdenum Plate Capping
Author
Jin, Han ByulJeon, YoungeunJung, SungchulModepalli, VijayakumarKang, Hyun SukLee, Byung CheolKo, Jae-HyeonShin, Hyung-JoonYoo, Jung-WooKim, Sung YoubKwon, Soon-YongEom, DaejinPark, Kibog
Keywords
Epitaxial Graphene, Silicon Carbide, Molybdenum Plate Capping, Thermal Radiation Mirroring, Confinement Controlled Growth, Field Effect Transistor, Silicon Absorber
Issue Date
201504
Publisher
NATURE PUBLISHING GROUP
Citation
SCIENTIFIC REPORTS, v.5, no., pp.9615 -
Abstract
The crystallinity of epitaxial graphene (EG) grown on a Hexagonal-SiC substrate is found to be enhanced greatly by capping the substrate with a molybdenum plate (Mo-plate) during vacuum annealing. The crystallinity enhancement of EG layer grown with Mo-plate capping is confirmed by the significant change of measured Raman spectra, compared to the spectra for no capping. Mo-plate capping is considered to induce heat accumulation on SiC surface by thermal radiation mirroring and raise Si partial pressure near surface by confining the sublimated Si atoms between SiC substrate and Mo-plate, which would be the essential contributors of crystallinity enhancement
URI
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DOI
http://dx.doi.org/10.1038/srep09615
ISSN
2045-2322
Appears in Collections:
MNE_Journal Papers
SNS_Journal Papers
MSE_Journal Papers

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