dc.citation.endPage |
1080 |
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dc.citation.startPage |
1077 |
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dc.citation.title |
MATERIALS SCIENCE FORUM |
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dc.citation.volume |
457-460 |
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dc.contributor.author |
Ding, Y |
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dc.contributor.author |
Park, Kibog |
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dc.contributor.author |
Pelz, JP |
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dc.contributor.author |
Los, AV |
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dc.contributor.author |
Mazzola, MS |
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dc.date.accessioned |
2023-12-22T11:07:39Z |
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dc.date.available |
2023-12-22T11:07:39Z |
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dc.date.created |
2014-11-10 |
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dc.date.issued |
2004 |
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dc.description.abstract |
Ballistic electron emission microscopy (BEEM) measurements have been performed on Pt/p-type 4H-SiC Schottky contacts to probe the metal/semiconductor (M/S) interface and the valence band structure of the semiconductor. The Schottky barrier height (SBH) is found to be 1.45 eV, compared with 1.55 eV for Pt on n-type 4H-SiC measured under identical conditions with BEEM. A second threshold is also observed in the BEEM spectrum on Pt/p-type 4H-SiC contacts, which is possibly related to a lower-energy valence band. The sum of the measured p-type and n-type SBH's is slightly less than the 4H-SiC bandgap, which suggests the existence of an interfacial oxide layer and rather weak Fermi level pinning, consistent with prior measurements of SBH vs. metal work function. |
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dc.identifier.bibliographicCitation |
MATERIALS SCIENCE FORUM, v.457-460, pp.1077 - 1080 |
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dc.identifier.doi |
10.4028/www.scientific.net/MSF.457-460.1077 |
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dc.identifier.issn |
0255-5476 |
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dc.identifier.scopusid |
2-s2.0-8744293886 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/10075 |
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dc.identifier.url |
https://www.scientific.net/MSF.457-460.1077 |
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dc.identifier.wosid |
000222802200256 |
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dc.language |
영어 |
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dc.publisher |
TRANS TECH PUBLICATIONS LTD |
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dc.title |
Ballistic electron emission microscopy study of p-type 4H-SiC |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scopus |
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