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Showing results 1 to 10 of 10

Issue DateTitleAuthor(s)TypeView
2013A high resolution and high linearity 45 nm CMOS fully digital voltage sensor for low power applicationsRyu, Myunghwan; Kim, YoungminARTICLE312
201202A novel methodology for speeding up IC performance in 32nm FinFETNguyen, Hung Viet; Ryu, Myunghwan; Kim, YoungminARTICLE243
201412Comprehensive Performance Analysis of Interconnect Variation by double and triple patterning lithography processesKim, Youngmin; Lee, Jaemin; Ryu, MyunghwanARTICLE239
201111Diffusion-rounded CMOS for improving both I-on and I-off characteristicsRyu, Myunghwan; Nguyen, Hung Viet; Kim, YoungminARTICLE254
201508Impacts of Trapezoidal Fin of 20-nm Double-Gate FinFET on the Electrical Characteristics of CircuitsRyu, Myunghwan; Kim, YoungminARTICLE136
201506On-chip interconnect boosting technique by using of 10-nm double gate-all-around (DGAA) transistorLee, Jaemin; Ryu, Myunghwan; Kim, YoungminARTICLE209
201601Optimal inverter logic gate using 10-nm double gate-all-around (DGAA) transistor with asymmetric channel widthRyu, Myunghwan; Bien, Franklin; Kim, YoungminARTICLE102
2016-08Process-induced Structural Variability-aware Performance Optimization for Advanced Nanoscale TechnologiesBien, Franklin; Ryu, MyunghwanDoctoral Thesis128
2013Trapezoidal approximation for on-current modeling of 45-nm non-rectilinear gate shapeRyu, Myunghwan; Kim, YoungminARTICLE298
201212TSV Geometrical Variations and Optimization Metric with Repeaters for 3D ICNguyen, Hung Viet ; Ryu, Myunghwan; Kim, YoungminARTICLE227
Showing results 1 to 10 of 10

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