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Showing results 1 to 12 of 12

Charge-Storage-Based vs. Non-Charge-Storage-Based 1T Non-Volatile Memory through the Interaction between Oxide Semiconductor Channel and Gate Oxide Layer

Han, Jimin , Jeong, Boyoung , Noh, Taeyun , Yoon, Tae-Sik

Conference Paper Issue Date2023-03-08 View34
Charge-Trap Memory Characteristics with UV/Ozone-Treated HfO2-x Gate Oxide and Oxide Semiconductor Channel Layer

Noh, Taeyun , Han, Jimin , Jeong, Boyoung , Yoon, Tae-Sik

Conference Paper Issue Date2023-03-09 View5
Enhanced linear and symmetric synaptic weight update characteristics in a Pt/p-LiCoOx/p-NiO/Pt memristor through interface energy barrier modulation by Li ion redistribution File File

Jeong, Boyoung , Chung, Peter Hayoung , Han, Jimin , Noh, Taeyun , Yoon, Tae-Sik

Article Issue Date2024-03 View10
Improvement of forming-free threshold switching reliability of CeO2-based selector device by controlling volatile filament formation behaviors File

Sahu, Dwipak Prasad , Park, Kitae , Han, Jimin , Yoon, Tae-Sik

Article Issue Date2022-05 View8
Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfOx bilayer memristive device for neuromorphic computing File File

Sahu, Dwipak Prasad , Park, Kitae , Chung, Peter Hayoung , Han, Jimin , Yoon, Tae-Sik

Article Issue Date2023-06 View14
Low-Operation Voltage Non-Volatile Memory Characteristics with Oxide-Semiconductor Thin-Film Transistors Through Interaction Between Oxide Semiconductor Channel and Gate Oxide

Han, Jimin , Jeong, Boyoung , Yoon, Tae-Sik

Conference Paper Issue Date2023-04-12 View23
Non-Charge Storage Based Nonvolatile Memory with IGZO Oxide Semiconductor and LiCoOx Charge Trap & Ion Supplying Layer with Large Memory Window

Jeong, Boyoung , Han, Jimin , Noh, Taeyun , Yoon, Tae-Sik

Conference Paper Issue Date2023-04-12 View10
Non-volatile charge-trap memory characteristics with low-temperature atomic layer deposited HfO2-x charge-trap layer and interfacial tunneling oxide formed by UV/ozone treatment File

Han, Jimin , Jeong, Boyoung , Sahu, Dwipak Prasad , Kim, Hyun-Mi , Yoon, Tae-Sik

Article Issue Date2023-08 View10
Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide File File

Han, Jimin , Jeong, Boyoung , Kim, Yuri , Suh, Joonki , Jeong, Hongsik , Kim, Hyun-Mi , Yoon, Tae-Sik

Article Issue Date2022-08 View15
Tunable Multilevel Gate Oxide Capacitance and Flat-Band Voltage Shift Characteristics by Filament Formation in Double-Floating-Gate Metal-Oxide-Semiconductor Capacitors File

Han, Jimin , Park, Kitae , Kim, Hyun-Mi , Yoon, Tae-Sik

Article Issue Date2023-04 View15
Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application File

Beom, Keonwon , Han, Jimin , Kim, Hyun-Mi , Yoon, Tae-Sik

Article Issue Date2021-07 View18
Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoO x Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor File

Jeong, Boyoung , Han, Jimin , Noh, Taeyun , Yoon, Tae-Sik

Article Issue Date2023-05 View13
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